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MEMS OSC XO 24.0000MHZ H/LV-CMOS
TRANS SJT N-CH 1.2KV 13A TO263
DIODE AVALANCHE 1KV 1.5A
2MM DOUBLE ROW FEMALE IDC ASSEMB
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| 类型 | 描述 |
|---|---|
| 系列: | CoolSiC™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | SiC (Silicon Carbide Junction Transistor) |
| 漏源电压 (vdss): | 1.2 kV |
| 电流 - 连续漏极 (id) @ 25°c: | 13A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 294mOhm @ 4A, 18V |
| vgs(th) (最大值) @ id: | 5.7V @ 1.6mA |
| 栅极电荷 (qg) (max) @ vgs: | 9.4 nC @ 18 V |
| vgs (最大值): | +18V, -15V |
| 输入电容 (ciss) (max) @ vds: | 312 pF @ 800 V |
| 场效应管特征: | Standard |
| 功耗（最大值）: | 83W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-TO263-7-12 |
| 包/箱: | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
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