







MEMS OSC XO 156.257812MHZ LVCMOS
POWER FIELD-EFFECT TRANSISTOR
CONN RCPT 27POS 0.1 GOLD PCB
B946 7402-1 WHT/GRN STYLE 1
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 400 V |
| 电流 - 连续漏极 (id) @ 25°c: | 8A (Ta) |
| 驱动电压(最大 rds on,最小 rds on): | 10V |
| rds on (max) @ id, vgs: | 800mOhm @ 4A, 10V |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | 20 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 620 pF @ 25 V |
| 场效应管特征: | - |
| 功耗(最大值): | 65W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | MP-3A |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
NTLJS3A18PZTWGRochester Electronics |
MOSFET P-CH 20V 5A 6WDFN |
|
|
FQP5N30Rochester Electronics |
MOSFET N-CH 300V 5.4A TO220-3 |
|
|
IPP65R225C7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 11A TO220-3 |
|
|
2N7002KW-F2-0000HF |
N-CH MOSFET 60V 0.34A SOT-323 |
|
|
FQAF44N10Rochester Electronics |
MOSFET N-CH 100V 33A TO3PF |
|
|
FDS6299SRochester Electronics |
MOSFET N-CH 30V 21A 8SOIC |
|
|
TK6P65W,RQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 5.8A DPAK |
|
|
NTB6411ANGRochester Electronics |
MOSFET N-CH 100V 77A D2PAK |
|
|
SI5419DU-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 12A PPAK CHIPFET |
|
|
SQJ486EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 75V 30A PPAK SO-8 |
|
|
2SK4096LSRochester Electronics |
MOSFET N-CH 500V 7.1A TO220FI |
|
|
2SK3299B-S19-AYRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
SI7655DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 40A PPAK1212-8S |