







MOSFET P-CH 60V 3.6A PPAK1212-8
CONN HEADER R/A 14POS 2.5MM
CONN HEADER VERT 26POS 1.27MM
IC BATT MFUNC LI-ION 3-6C 24VQFN
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.6A (Ta) |
| 驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
| rds on (max) @ id, vgs: | 65mOhm @ 5.7A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 25 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗(最大值): | 1.5W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® 1212-8 |
| 包/箱: | PowerPAK® 1212-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
IPP60R165CPXKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 21A TO220-3 |
|
|
IRF644STRLPBFVishay / Siliconix |
MOSFET N-CH 250V 14A D2PAK |
|
|
SIHS90N65E-E3Vishay / Siliconix |
MOSFET N-CH 650V 87A SUPER247 |
|
|
RJK4006DPD-00#J2Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
|
NTLJS3A18PZTWGRochester Electronics |
MOSFET P-CH 20V 5A 6WDFN |
|
|
FQP5N30Rochester Electronics |
MOSFET N-CH 300V 5.4A TO220-3 |
|
|
IPP65R225C7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 11A TO220-3 |
|
|
2N7002KW-F2-0000HF |
N-CH MOSFET 60V 0.34A SOT-323 |
|
|
FQAF44N10Rochester Electronics |
MOSFET N-CH 100V 33A TO3PF |
|
|
FDS6299SRochester Electronics |
MOSFET N-CH 30V 21A 8SOIC |
|
|
TK6P65W,RQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 5.8A DPAK |
|
|
NTB6411ANGRochester Electronics |
MOSFET N-CH 100V 77A D2PAK |
|
|
SI5419DU-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 12A PPAK CHIPFET |