类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH, RAM |
技术: | FLASH - NAND, Mobile LPDRAM |
内存大小: | 1Gb (128M x 8)(NAND), 512Mb (16M x 32)(LPDRAM) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 153-VFBGA |
供应商设备包: | 153-VFBGA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
25LC010A/WF16KRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 10MHZ DIE |
|
70261S55PF/2703Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
M58LT256KSB8ZA6EMicron Technology |
IC FLASH 256MBIT PARALLEL 64TBGA |
|
MT53D1G64D8NW-062 WT ES:D TRMicron Technology |
LPDDR4 64G 1GX64 FBGA 8DP |
|
CG8553AACypress Semiconductor |
MICROPOWER SRAMS |
|
MT41J256M8HX-125:DMicron Technology |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
S99PL127J0220Cypress Semiconductor |
IC FLASH |
|
70V08S25PFIRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
S98WS768P0GFW0160BCypress Semiconductor |
IC MEMORY NOR |
|
AT28C040-25BCRoving Networks / Microchip Technology |
IC EEPROM 4MBIT PARALLEL 32CDIP |
|
24AA04SC-I/S16KRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 400KHZ DIE |
|
MT46H256M32L4SA-48 WT:CMicron Technology |
IC DRAM 8GBIT PARALLEL 168TFBGA |
|
M24128S-FCU6T/TFSTMicroelectronics |
IC EEPROM 128KBIT I2C 4WLCSP |