| 类型 | 描述 | 
|---|---|
| 系列: | GigaMOS™ | 
| 包裹: | Tube | 
| 零件状态: | Active | 
| 场效应管类型: | N-Channel | 
| 技术: | MOSFET (Metal Oxide) | 
| 漏源电压 (vdss): | 170 V | 
| 电流 - 连续漏极 (id) @ 25°c: | 320A (Tc) | 
| 驱动电压(最大 rds on,最小 rds on): | 10V | 
| rds on (max) @ id, vgs: | 5.2mOhm @ 60A, 10V | 
| vgs(th) (最大值) @ id: | 5V @ 8mA | 
| 栅极电荷 (qg) (max) @ vgs: | 640 nC @ 10 V | 
| vgs (最大值): | ±20V | 
| 输入电容 (ciss) (max) @ vds: | 45000 pF @ 25 V | 
| 场效应管特征: | - | 
| 功耗(最大值): | 1670W (Tc) | 
| 工作温度: | -55°C ~ 175°C (TJ) | 
| 安装类型: | Through Hole | 
| 供应商设备包: | PLUS247™-3 | 
| 包/箱: | TO-247-3 | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
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