类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Last Time Buy |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ms |
访问时间: | 120 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 28-TSSOP (0.465", 11.80mm Width) |
供应商设备包: | 28-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
GD25S512MDYIGRGigaDevice |
IC FLASH 512MBIT SPI/QUAD 8WSON |
|
IS25LP032D-JKLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 32MBIT SPI/QUAD 8WSON |
|
S29GL01GS11FAIV23Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
CY7C199L-15VCRochester Electronics |
STANDARD SRAM, 32KX8, 15NS |
|
FM24C03UEM8Rochester Electronics |
IC EEPROM 2KBIT I2C 100KHZ 8SO |
|
AS4C128M16D3B-12BCNTRAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
AT25512N-SH-TRoving Networks / Microchip Technology |
IC EEPROM 512KBIT SPI 8SOIC |
|
IS62WV25616EALL-55TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
93LC46T/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
IS46R16320D-5TLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
70T633S10BC8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
QS7025A-25JRochester Electronics |
IC SRAM 128KBIT 40MHZ |
|
R1LP0108ESP-5SI#B0Rochester Electronics |
IC SRAM 1MBIT PARALLEL 32SOP |