English
简体中文
XTAL OSC VCXO 160.0000MHZ LVPECL
IGBT D2PAK 360V CL
IC DRAM 512MBIT PAR 66TSOP II
INSULATION DISPLACEMENT TERMINAL
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Not For New Designs |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR |
| 内存大小: | 512Mb (32M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 200 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 700 ps |
| 电压 - 电源: | 2.5V ~ 2.7V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 66-TSSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 66-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
70T633S10BC8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
QS7025A-25JRochester Electronics |
IC SRAM 128KBIT 40MHZ |
|
R1LP0108ESP-5SI#B0Rochester Electronics |
IC SRAM 1MBIT PARALLEL 32SOP |
|
S25FL064LABBHV020Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 24BGA |
|
25AA080-I/PRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 1MHZ 8DIP |
|
IS43LD16640C-25BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 134TFBGA |
|
AT24C08D-STUM-TRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 1MHZ SOT23-5 |
|
CY7C1612KV18-333BZCRochester Electronics |
IC SRAM 144MBIT PARALLEL 165FBGA |
|
RM24C32C-LTAI-BAdesto Technologies |
IC CBRAM 32KBIT I2C 1MHZ 8TSSOP |
|
CY62157CV33LL-70BAIRochester Electronics |
STANDARD SRAM, 512KX16, 70NS |
|
IS42S32400F-7BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
AS4C32M16D1A-5TCNTRAlliance Memory, Inc. |
IC DRAM 512MBIT PAR 66TSOP II |
|
24LC014-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8SOIC |