English
简体中文
IC SRAM 4.5MBIT PARALLEL 100TQFP
IC SRAM 4.5MBIT PARALLEL 100TQFP
DIODE GEN PURPOSE
CONN BARRIER STRP 20CIRC 0.375"
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | NoBL™ |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 4.5Mb (128K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 4 ns |
| 电压 - 电源: | 3.135V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY14E256LA-SZ45XQTCypress Semiconductor |
IC NVSRAM 256KBIT PAR 32SOIC |
|
BR24G08NUX-3TTRROHM Semiconductor |
IC EEPROM 8KBIT I2C VSON008X2030 |
|
NV24C16DWVLT3GSanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KBIT I2C 1MHZ 8SOIC |
|
IS43TR16256BL-125KBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
CY14MB256J1-SXIRochester Electronics |
IC NVSRAM 256KBIT I2C 8SOIC |
|
IS41LV16100D-50TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
|
IS42S16400J-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 54TFBGA |
|
RM24C128DS-LTAI-BAdesto Technologies |
IC CBRAM 128KBIT I2C 1MHZ 8TSSOP |
|
AT25XV041B-XMHV-BAdesto Technologies |
IC FLASH 4MBIT SPI 85MHZ 8TSSOP |
|
25AA160B-I/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8MSOP |
|
MR0DL08BMA45Everspin Technologies, Inc. |
IC RAM 1MBIT PARALLEL 48FBGA |
|
S-93A86BD0A-J8T2U3ABLIC U.S.A. Inc. |
IC EEPROM 16KBIT SPI 2MHZ 8SOPJ |
|
71321SA55JGRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |