English
简体中文
FUSE CERAMIC 4.5A 250VAC AXIAL
XTAL OSC VCXO 90.0000MHZ LVDS
IC RAM 1MBIT PARALLEL 48FBGA
XTAL OSC XO 36.0000MHZ CMOS SMD
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | RAM |
| 技术: | MRAM (Magnetoresistive RAM) |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 45ns |
| 访问时间: | 45 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-LFBGA |
| 供应商设备包: | 48-FBGA (8x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S-93A86BD0A-J8T2U3ABLIC U.S.A. Inc. |
IC EEPROM 16KBIT SPI 2MHZ 8SOPJ |
|
71321SA55JGRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
DS1270W-100Rochester Electronics |
IC NVSRAM 16MBIT PARALLEL 36EDIP |
|
CYDM256B16-55BVXIRochester Electronics |
DUAL-PORT SRAM, 16KX16, 55NS PBG |
|
IS63WV1288DBLL-10HLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32TSOP I |
|
71T75602S166BGGI8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
IS42VM16200D-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 32MBIT PARALLEL 54TFBGA |
|
MT29F1G16ABBEAH4-AITX:E TRMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
SM662PXD BDS TTC29Silicon Motion |
FERRI EMMC 128GB 3D TLC (153 BAL |
|
24LC32AT-E/MCRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 400KHZ 8DFN |
|
AT24C128C-SSHM-BRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 1MHZ 8SOIC |
|
IS43TR16256BL-125KBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
MT46H16M32LFB5-5 IT:C TRMicron Technology |
IC DRAM 512MBIT PARALLEL 90VFBGA |