English
简体中文
MEMS OSC XO 38.0000MHZ H/LV-CMOS
XTAL OSC XO 109.0000MHZ CMOS SMD
IC SRAM 1MBIT PARALLEL 32SOJ
SWITCH TOGGLE DPDT 15A 125V
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 12ns |
| 访问时间: | 12 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-BSOJ (0.300", 7.62mm Width) |
| 供应商设备包: | 32-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
24LC512-I/PRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8DIP |
|
UPD44325092BF5-E40-FQ1Rochester Electronics |
QDR SRAM, 4MX9, 0.45NS |
|
M5M51008DVP-70HISTRochester Electronics |
IC SRAM 1MBIT PARALLEL 32TSOP |
|
CY14V101LA-BA45XIRochester Electronics |
IC NVSRAM 1MBIT PARALLEL 48FBGA |
|
IS42SM16800H-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
W632GG8NB-11Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |
|
IS42S32800J-75ETLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 86TSOP II |
|
IS45S16160G-7CTLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
AT28HC256-12TU-TRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28TSOP |
|
W25Q32JVSFIQWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 16SOIC |
|
MT29F32G08CBACAWP-Z:C TRMicron Technology |
IC FLSH 32GBIT PARALLEL 48TSOP I |
|
MT58L64L36PT-10Rochester Electronics |
CACHE SRAM, 64KX36, 5NS PQFP100 |
|
IS25LP016D-JKLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 16MBIT SPI/QUAD 8WSON |