English
简体中文
NMP CONFIGURABLE POWER SUPPLY 12
CRYSTAL 32.0000MHZ 4PF SMD
XTAL OSC VCXO 133.6500MHZ LVPECL
IC NVSRAM 1MBIT PARALLEL 48FBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | NVSRAM |
| 技术: | NVSRAM (Non-Volatile SRAM) |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 45ns |
| 访问时间: | 45 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-TFBGA |
| 供应商设备包: | 48-FBGA (6x10) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS42SM16800H-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
W632GG8NB-11Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |
|
IS42S32800J-75ETLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 86TSOP II |
|
IS45S16160G-7CTLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
AT28HC256-12TU-TRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28TSOP |
|
W25Q32JVSFIQWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 16SOIC |
|
MT29F32G08CBACAWP-Z:C TRMicron Technology |
IC FLSH 32GBIT PARALLEL 48TSOP I |
|
MT58L64L36PT-10Rochester Electronics |
CACHE SRAM, 64KX36, 5NS PQFP100 |
|
IS25LP016D-JKLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 16MBIT SPI/QUAD 8WSON |
|
IS42VM32160E-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
IS43LD32640B-18BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 134TFBGA |
|
70V3579S5BCI8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 256CABGA |
|
71V424L15PHGIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |