







 
                            MEMS OSC XO 54.0000MHZ CMOS SMD
 
                            IC REG LINEAR 2.6V 120MA SC70-5
 
                            ACT94WJ37SB
 
                            IGBT 3 CHIP 600V WAFER
| 类型 | 描述 | 
|---|---|
| 系列: | - | 
| 包裹: | Bulk | 
| 零件状态: | Obsolete | 
| igbt型: | NPT | 
| 电压 - 集电极发射极击穿(最大值): | 600 V | 
| 电流 - 集电极 (ic) (max): | 15 A | 
| 电流 - 集电极脉冲 (icm): | 45 A | 
| vce(on) (max) @ vge, ic: | 2.5V @ 15V, 15A | 
| 功率 - 最大值: | - | 
| 开关能量: | - | 
| 输入类型: | Standard | 
| 栅极电荷: | - | 
| td(开/关)@ 25°c: | 31ns/261ns | 
| 测试条件: | 400V, 15A, 21Ohm, 15V | 
| 反向恢复时间 (trr): | - | 
| 工作温度: | -55°C ~ 150°C (TJ) | 
| 安装类型: | Surface Mount | 
| 包/箱: | Die | 
| 供应商设备包: | Die | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | FID36-06DWickmann / Littelfuse | IGBT 600V 38A 125W I4PAC5 | 
|   | SIGC14T60NCX1SA1IR (Infineon Technologies) | IGBT 3 CHIP 600V WAFER | 
|   | APT70GR65B2DU40Microsemi | INSULATED GATE BIPOLAR TRANSISTO | 
|   | SIGC54T60R3EX7SA1IR (Infineon Technologies) | IGBT 3 CHIP 600V 100A WAFER | 
|   | SIGC18T60NCX1SA1IR (Infineon Technologies) | IGBT 3 CHIP 600V WAFER | 
|   | SIGC07T60NCX1SA4IR (Infineon Technologies) | IGBT 3 CHIP 600V WAFER | 
|   | IXGM20N60Wickmann / Littelfuse | POWER MOSFET TO-3 | 
|   | 1214-55PMicrosemi | TRANSISTOR | 
|   | IRGC14C40LDIR (Infineon Technologies) | IGBT IGNITION LL | 
|   | SIGC121T60NR2CX1SA3IR (Infineon Technologies) | IGBT 3 CHIP 600V WAFER | 
|   | IGC99T120T8RQX1SA1IR (Infineon Technologies) | IGBT CHIP | 
|   | NGD8201THWickmann / Littelfuse | IGBT 400V 20A 125W DPAK-3 | 
|   | IRGC10B60KBIR (Infineon Technologies) | IGBT CHIP |