







 
                            XTAL OSC VCXO 622.0800MHZ LVDS
 
                            IC REG BUCK ADJ 1A QD 28TQFN
 
                            KEYLOCK SWITCH-ACTUATOR 3 POSITI
 
                            POWER MOSFET TO-3
| 类型 | 描述 | 
|---|---|
| 系列: | - | 
| 包裹: | Tube | 
| 零件状态: | Obsolete | 
| igbt型: | - | 
| 电压 - 集电极发射极击穿(最大值): | 600 V | 
| 电流 - 集电极 (ic) (max): | 40 A | 
| 电流 - 集电极脉冲 (icm): | 80 A | 
| vce(on) (max) @ vge, ic: | 2.5V @ 15V, 20A | 
| 功率 - 最大值: | 150 W | 
| 开关能量: | 2mJ (on), 3.2mJ (off) | 
| 输入类型: | Standard | 
| 栅极电荷: | 120 nC | 
| td(开/关)@ 25°c: | 100ns/600ns | 
| 测试条件: | 480V, 20A, 82Ohm, 15V | 
| 反向恢复时间 (trr): | 200 ns | 
| 工作温度: | -55°C ~ 150°C (TJ) | 
| 安装类型: | Through Hole | 
| 包/箱: | TO-204AE | 
| 供应商设备包: | TO-204AE | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | 1214-55PMicrosemi | TRANSISTOR | 
|   | IRGC14C40LDIR (Infineon Technologies) | IGBT IGNITION LL | 
|   | SIGC121T60NR2CX1SA3IR (Infineon Technologies) | IGBT 3 CHIP 600V WAFER | 
|   | IGC99T120T8RQX1SA1IR (Infineon Technologies) | IGBT CHIP | 
|   | NGD8201THWickmann / Littelfuse | IGBT 400V 20A 125W DPAK-3 | 
|   | IRGC10B60KBIR (Infineon Technologies) | IGBT CHIP | 
|   | RJP65T54DPM-A0#T2Renesas Electronics America | IGBT TRENCH 650V 60A TO-3PFP | 
|   | IRG8CH20K10DIR (Infineon Technologies) | IGBT 1200V ULTRA FAST DIE | 
|   | NGTD17T65F2WPSanyo Semiconductor/ON Semiconductor | IGBT TRENCH FIELD STOP 650V DIE | 
|   | FID35-06CWickmann / Littelfuse | IGBT 600V 38A 125W I4PAC5 | 
|   | SIGC121T60NR2CX1SA2IR (Infineon Technologies) | IGBT 3 CHIP 600V WAFER | 
|   | SIGC07T60SNCX1SA3IR (Infineon Technologies) | IGBT 3 CHIP 600V WAFER | 
|   | SIGC07T60SNCX7SA1IR (Infineon Technologies) | IGBT 3 CHIP 600V WAFER |