English
简体中文
XTAL OSC VCXO 156.2500MHZ LVDS
DIODE ZENER 270V 1.25W DO214AC
IC DRAM 16MBIT PAR 50TSOP II
MOSFET P-CH 20V 3A UFM
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | U-MOSVI |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.5V, 4.5V |
| rds on (max) @ id, vgs: | 103mOhm @ 1A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 4.6 nC @ 4.5 V |
| vgs (最大值): | +6V, -8V |
| 输入电容 (ciss) (max) @ vds: | 270 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 500mW (Ta) |
| 工作温度: | 150°C |
| 安装类型: | Surface Mount |
| 供应商设备包: | UFM |
| 包/箱: | 3-SMD, Flat Lead |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
NTHL040N120SC1Sanyo Semiconductor/ON Semiconductor |
TRANS SJT N-CH 1200V 60A TO247-3 |
|
|
BB502MBS-TR-ERochester Electronics |
RF N-CHANNEL MOSFET |
|
|
TK15S04N1L,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 15A DPAK |
|
|
IPW65R155CFD7XKSA1IR (Infineon Technologies) |
HIGH POWER_NEW |
|
|
IPN80R1K4P7Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
FCPF600N65S3R0L-F154Sanyo Semiconductor/ON Semiconductor |
POWER SUPERFET MOSFET N-CHANNEL |
|
|
RJK0389DPA-WS#J53Rochester Electronics |
POWER TRANSISTOR, MOSFET |
|
|
IRFP460APBFXKMA1IR (Infineon Technologies) |
PLANAR >= 100V |
|
|
IPB080N03L GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
NTBLS1D5N08MCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 32A/298A 8HPSOF |
|
|
NTMFS5C646NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 20A/93A 5DFN |
|
|
PMXB360ENEA147Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
|
SPW52N50C3XKRochester Electronics |
SPW52N50 - 500V COOLMOS N-CHANNE |