English
简体中文
MEMS OSC XO 8.1920MHZ H/LV-CMOS
MEMS OSC XO 60.0000MHZ H/LV-CMOS
HIGH POWER_NEW
HOOK-UP DL WALL STRND 22AWG YEL
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ CFD7 |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 15A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 155mOhm @ 6.4A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 320µA |
| 栅极电荷 (qg) (max) @ vgs: | 28 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1283 pF @ 400 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 77W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO247-3 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
IPN80R1K4P7Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
FCPF600N65S3R0L-F154Sanyo Semiconductor/ON Semiconductor |
POWER SUPERFET MOSFET N-CHANNEL |
|
|
RJK0389DPA-WS#J53Rochester Electronics |
POWER TRANSISTOR, MOSFET |
|
|
IRFP460APBFXKMA1IR (Infineon Technologies) |
PLANAR >= 100V |
|
|
IPB080N03L GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
NTBLS1D5N08MCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 32A/298A 8HPSOF |
|
|
NTMFS5C646NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 20A/93A 5DFN |
|
|
PMXB360ENEA147Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
|
SPW52N50C3XKRochester Electronics |
SPW52N50 - 500V COOLMOS N-CHANNE |
|
|
DMT67M8LCG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 16A/64.6A 8DFN |
|
|
SIHB17N80E-T1-GE3Vishay / Siliconix |
MOSFET N-CH 800V 15A D2PAK |
|
|
2SJ486ZU-TL-ERochester Electronics |
SMALL SIGNAL P-CHANNEL MOSFET |
|
|
IRFD1Z3Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |