English
简体中文
XTAL OSC VCTCXO 25.0000MHZ
ALTA CORPORATE PROPERTY MONITORI
OSC XO 1.12GHZ 3.3V LVPECL
GANFET N-CH 200V 3A DIE
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | eGaN® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Discontinued at Digi-Key |
| 场效应管类型: | N-Channel |
| 技术: | GaNFET (Gallium Nitride) |
| 漏源电压 (vdss): | 200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 5V |
| rds on (max) @ id, vgs: | 100mOhm @ 3A, 5V |
| vgs(th) (最大值) @ id: | 2.5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 1.8 nC @ 5 V |
| vgs (最大值): | +6V, -5V |
| 输入电容 (ciss) (max) @ vds: | 145 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | -40°C ~ 125°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | Die |
| 包/箱: | Die |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NVMFS5885NLWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 10.2A 5DFN |
|
IRFZ48NSTRRIR (Infineon Technologies) |
MOSFET N-CH 55V 64A D2PAK |
|
IRL3103D1STRRVishay / Siliconix |
MOSFET N-CH 30V 64A D2PAK |
|
BS170PSTOAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 270MA E-LINE |
|
IRLR014NTRLIR (Infineon Technologies) |
MOSFET N-CH 55V 10A DPAK |
|
STB11NM60N-1STMicroelectronics |
MOSFET N-CH 600V 10A I2PAK |
|
IPP100N06S3-04IR (Infineon Technologies) |
MOSFET N-CH 55V 100A TO220-3 |
|
RJK5012DPE-00#J3Renesas Electronics America |
MOSFET N-CH 500V 12A 4LDPAK |
|
SIB412DK-T1-E3Vishay / Siliconix |
MOSFET N-CH 20V 9A PPAK SC75-6 |
|
IRFR3505TRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 30A DPAK |
|
IXTQ200N06PWickmann / Littelfuse |
MOSFET N-CH 60V 200A TO3P |
|
IRF7324D1IR (Infineon Technologies) |
MOSFET P-CH 20V 2.2A 8SO |
|
IXFH20N60QWickmann / Littelfuse |
MOSFET N-CH 600V 20A TO247AD |