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MEMS OSC XO 33.0000MHZ LVCMOS LV
MEMS OSC XO 60.0000MHZ CMOS SMD
GANFET N-CH 200V 3A DIE
PWR XFMR LAMINATED 16VA TH
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| 类型 | 描述 |
|---|---|
| 系列: | eGaN® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Discontinued at Digi-Key |
| 场效应管类型: | N-Channel |
| 技术: | GaNFET (Gallium Nitride) |
| 漏源电压 (vdss): | 200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 5V |
| rds on (max) @ id, vgs: | 100mOhm @ 3A, 5V |
| vgs(th) (最大值) @ id: | 2.5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 1.8 nC @ 5 V |
| vgs (最大值): | +6V, -5V |
| 输入电容 (ciss) (max) @ vds: | 145 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | -40°C ~ 125°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | Die |
| 包/箱: | Die |
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