English
简体中文
MOSFET N-CH 60V 25A DPAK
MOSFET N-CH 55V 10A DPAK
SWITCH TOGGLE DPDT 5A 120V
OC-PA-S-FM-210F343O-030-0318
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 10A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 140mOhm @ 6A, 10V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 7.9 nC @ 5 V |
| vgs (最大值): | ±16V |
| 输入电容 (ciss) (max) @ vds: | 265 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 28W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STB11NM60N-1STMicroelectronics |
MOSFET N-CH 600V 10A I2PAK |
|
IPP100N06S3-04IR (Infineon Technologies) |
MOSFET N-CH 55V 100A TO220-3 |
|
RJK5012DPE-00#J3Renesas Electronics America |
MOSFET N-CH 500V 12A 4LDPAK |
|
SIB412DK-T1-E3Vishay / Siliconix |
MOSFET N-CH 20V 9A PPAK SC75-6 |
|
IRFR3505TRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 30A DPAK |
|
IXTQ200N06PWickmann / Littelfuse |
MOSFET N-CH 60V 200A TO3P |
|
IRF7324D1IR (Infineon Technologies) |
MOSFET P-CH 20V 2.2A 8SO |
|
IXFH20N60QWickmann / Littelfuse |
MOSFET N-CH 600V 20A TO247AD |
|
IRF7424TRIR (Infineon Technologies) |
MOSFET P-CH 30V 11A 8SO |
|
IRF9520STRRVishay / Siliconix |
MOSFET P-CH 100V 6.8A D2PAK |
|
IRF3707ZSPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 59A D2PAK |
|
FDC3512_F095Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 3A SUPERSOT6 |
|
IRFR120TRVishay / Siliconix |
MOSFET N-CH 100V 7.7A DPAK |