INVERTER/BUFFER
MOSFET N-CH 30V 60A I-PAK
CONN BARRIER STRP 10CIRC 0.374"
RF SHIELD 4.25" X 4.75" T/H
类型 | 描述 |
---|---|
系列: | STripFET™ III |
包裹: | Tube |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 60A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 5V, 10V |
rds on (max) @ id, vgs: | 9mOhm @ 30A, 10V |
vgs(th) (最大值) @ id: | 1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 21 nC @ 5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2200 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 70W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | I-PAK |
包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
IRFS3004-7PPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 240A D2PAK |
![]() |
SI7413DN-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 8.4A PPAK1212-8 |
![]() |
IXTP7N60PMWickmann / Littelfuse |
MOSFET N-CH 600V 4A TO220AB |
![]() |
SIB413DK-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 9A PPAK SC75-6 |
![]() |
NVMFS5C682NLWFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 5DFN |
![]() |
TK4A65DA(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 3.5A TO220SIS |
![]() |
STU95N3LLH6STMicroelectronics |
MOSFET N-CH 30V 80A IPAK |
![]() |
IRL540LVishay / Siliconix |
MOSFET N-CH 100V 28A TO262-3 |
![]() |
IRF7475TRPBFIR (Infineon Technologies) |
MOSFET N-CH 12V 11A 8SO |
![]() |
IPB136N08N3 GIR (Infineon Technologies) |
MOSFET N-CH 80V 45A D2PAK |
![]() |
FDI3632Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 12A/80A I2PAK |
![]() |
RJK6013DPE-00#J3Renesas Electronics America |
MOSFET N-CH 600V 11A 4LDPAK |
![]() |
TSM4NB60CZ C0GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 600V 4A TO220 |