English
简体中文
MEMS OSC XO 133.3300MHZ LVCMOS
MOSFET P-CH 20V 8.4A PPAK1212-8
IC REG CTRLR AMD SVI 2OUT 48QFN
CONN BARRIER STRP 20CIRC 0.325"
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 8.4A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 15mOhm @ 13.2A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 400µA |
| 栅极电荷 (qg) (max) @ vgs: | 51 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.5W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® 1212-8 |
| 包/箱: | PowerPAK® 1212-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IXTP7N60PMWickmann / Littelfuse |
MOSFET N-CH 600V 4A TO220AB |
|
SIB413DK-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 9A PPAK SC75-6 |
|
NVMFS5C682NLWFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 5DFN |
|
TK4A65DA(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 3.5A TO220SIS |
|
STU95N3LLH6STMicroelectronics |
MOSFET N-CH 30V 80A IPAK |
|
IRL540LVishay / Siliconix |
MOSFET N-CH 100V 28A TO262-3 |
|
IRF7475TRPBFIR (Infineon Technologies) |
MOSFET N-CH 12V 11A 8SO |
|
IPB136N08N3 GIR (Infineon Technologies) |
MOSFET N-CH 80V 45A D2PAK |
|
FDI3632Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 12A/80A I2PAK |
|
RJK6013DPE-00#J3Renesas Electronics America |
MOSFET N-CH 600V 11A 4LDPAK |
|
TSM4NB60CZ C0GTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 600V 4A TO220 |
|
IPD180N10N3GBTMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 43A TO252-3 |
|
BXL4004-1ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 100A TO220-3 |