English
简体中文
CRYSTAL 20.0000MHZ 18PF SMD
DIODE SCHOTTKY 30V 3A DO214AB
MOSFET N-CH 60V 14A/46A TO251A
CONN RCPT FMALE 16P GOLD SLD CUP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 14A (Ta), 46A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 6.8mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 75 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4050 pF @ 30 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta), 150W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-251A |
| 包/箱: | TO-251-3 Stub Leads, IPak |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NVTFS5811NLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 16A 8WDFN |
|
IRLZ34Vishay / Siliconix |
MOSFET N-CH 60V 30A TO220AB |
|
IRF5210SPBFIR (Infineon Technologies) |
MOSFET P-CH 100V 38A D2PAK |
|
TPC8018-H(TE12LQM)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 18A 8SOP |
|
STF12NM50NSTMicroelectronics |
MOSFET N-CH 500V 11A TO220FP |
|
IXFH10N100QWickmann / Littelfuse |
MOSFET N-CH 1000V 10A TO247AD |
|
IRF3711LPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 110A TO262 |
|
IRLL3303TRIR (Infineon Technologies) |
MOSFET N-CH 30V 4.6A SOT223 |
|
IXFH60N20Wickmann / Littelfuse |
MOSFET N-CH 200V 60A TO247AD |
|
RP1E125XNTRROHM Semiconductor |
MOSFET N-CH 30V 12.5A MPT6 |
|
NTHD3133PFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3.2A CHIPFET |
|
BUK9618-55A,118NXP Semiconductors |
MOSFET N-CH 55V 61A D2PAK |
|
NTMFS5830NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 28A/172A 5DFN |