English
简体中文
IGBT WITH RECOVERY DIODE
IC TRANSCEIVER FULL 1/1 8SOIC
MOSFET P-CH 20V 3.2A CHIPFET
CONN HDR DIP POST 32POS GOLD
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.2A (Tj) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 80mOhm @ 3.2A, 4.5V |
| vgs(th) (最大值) @ id: | 1.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 7.4 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 680 pF @ 10 V |
| 场效应管特征: | Schottky Diode (Isolated) |
| 功耗（最大值）: | 1.1W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | ChipFET™ |
| 包/箱: | 8-SMD, Flat Lead |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUK9618-55A,118NXP Semiconductors |
MOSFET N-CH 55V 61A D2PAK |
|
NTMFS5830NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 28A/172A 5DFN |
|
NDPL100N10BGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 100A TO220-3 |
|
AON6760Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 28A/36A 8DFN |
|
IRFR5505CPBFIR (Infineon Technologies) |
MOSFET P-CH 55V 18A DPAK |
|
IXTA3N50PWickmann / Littelfuse |
MOSFET N-CH 500V 3.6A TO263 |
|
SI4684DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 16A 8SO |
|
TSM4N70CI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 700V 3.5A ITO220AB |
|
R6030KNZC8ROHM Semiconductor |
MOSFET N-CHANNEL 600V 30A TO3PF |
|
IRL1104STRLPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 104A D2PAK |
|
IRFI730GVishay / Siliconix |
MOSFET N-CH 400V 3.7A TO220-3 |
|
AOL1414Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 14A/85A ULTRASO8 |
|
IPB14N03LAIR (Infineon Technologies) |
MOSFET N-CH 25V 30A TO263-3 |