English
简体中文
CRYSTAL 27.0000MHZ 13PF SMD
XTAL OSC VCXO 76.8000MHZ HCSL
CONN SOCKET 36POS 0.1 GOLD PCB
MOSFET N-CH 600V 4A TO251A
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 4A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 950mOhm @ 1.3A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 18 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 910 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 125W (Tc) |
| 工作温度: | -50°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-251A |
| 包/箱: | TO-251-3 Stub Leads, IPak |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRLL3303TRPBFRochester Electronics |
HEXFET POWER MOSFET |
|
STB6N65M2STMicroelectronics |
MOSFET N-CH 650V 4A D2PAK |
|
BSS84PH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 60V 170MA SOT23-3 |
|
RK7002AT116ROHM Semiconductor |
MOSFET N-CH 60V 300MA SST3 |
|
BSP171PE6327IR (Infineon Technologies) |
MOSFET P-CH 60V 1.9A SOT223-4 |
|
IRLH5036TRPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 20A/100A 8PQFN |
|
2SK3906(Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 20A TO3P |
|
PHD18NQ10T,118NXP Semiconductors |
MOSFET N-CH 100V 18A DPAK |
|
SI5853DC-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 2.7A 1206-8 |
|
IRF6724MTR1PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 27A DIRECTFET |
|
IRF1310NSTRRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 42A D2PAK |
|
IPA90R340C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 900V 15A TO220-FP |
|
IRLR7811WPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 64A DPAK |