







TPA0102 1.5-W STEREO AUDIO POWER
MOSFET N-CH 60V 300MA SST3
SWITCH TOGGLE DPDT 5A 120V
CONN BARRIER STRP 22CIRC 0.375"
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 300mA (Ta) |
| 驱动电压(最大 rds on,最小 rds on): | 4V, 10V |
| rds on (max) @ id, vgs: | 1Ohm @ 300mA, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 6 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 33 pF @ 10 V |
| 场效应管特征: | - |
| 功耗(最大值): | 200mW (Ta) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SST3 |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
BSP171PE6327IR (Infineon Technologies) |
MOSFET P-CH 60V 1.9A SOT223-4 |
|
|
IRLH5036TRPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 20A/100A 8PQFN |
|
|
2SK3906(Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 20A TO3P |
|
|
PHD18NQ10T,118NXP Semiconductors |
MOSFET N-CH 100V 18A DPAK |
|
|
SI5853DC-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 2.7A 1206-8 |
|
|
IRF6724MTR1PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 27A DIRECTFET |
|
|
IRF1310NSTRRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 42A D2PAK |
|
|
IPA90R340C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 900V 15A TO220-FP |
|
|
IRLR7811WPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 64A DPAK |
|
|
SIR642DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8 |
|
|
SI4451DY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 10A 8SO |
|
|
SI5402DC-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 4.9A 1206-8 |
|
|
ATP104-TL-HXSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 75A ATPAK |