English
简体中文
MEMS OSC XO 66.0000MHZ LVCMOS LV
B30,B569,WHT,3" X 100 FT FIT
MOSFET N-CH 500V 16A TO247-3
DIODE GEN PURP 600V 500MA AXIAL
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 16A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 320mOhm @ 9.9A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 130 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 2760 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 220W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247-3 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPP054NE8NGHKSA2IR (Infineon Technologies) |
MOSFET N-CH 85V 100A TO220-3 |
|
STP80NE06-10STMicroelectronics |
MOSFET N-CH 60V 80A TO220AB |
|
FQB4N20LTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 3.8A D2PAK |
|
IRF2807ZSTRRVishay / Siliconix |
MOSFET N-CH 75V 75A D2PAK |
|
NTMS4P01R2Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 12V 3.4A 8SOIC |
|
NVMFS5C460NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 5DFN |
|
BSP110,115Nexperia |
MOSFET N-CH 100V 520MA SOT223 |
|
BUK7109-75ATE,118Nexperia |
MOSFET N-CH 75V 75A SOT426 |
|
SPI21N50C3HKSA1IR (Infineon Technologies) |
MOSFET N-CH 500V 21A TO262-3 |
|
IRLR7807ZTRPBFRochester Electronics |
IRLR7807 - HEXFET POWER MOSFET |
|
IRF614STRRVishay / Siliconix |
MOSFET N-CH 250V 2.7A D2PAK |
|
FQD5N60CTFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 2.8A DPAK |
|
SI7403BDN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 8A PPAK1212-8 |