English
简体中文
MEMS OSC XO 40.0000MHZ LVCMOS LV
OPTOISOLATOR 3.75KV DARL 8DIP GW
MOSFET N-CH 500V 21A TO262-3
MILDTL 38999 III JAM NUT
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 21A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 190mOhm @ 13.1A, 10V |
| vgs(th) (最大值) @ id: | 3.9V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 95 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2400 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 208W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO262-3-1 |
| 包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRLR7807ZTRPBFRochester Electronics |
IRLR7807 - HEXFET POWER MOSFET |
|
IRF614STRRVishay / Siliconix |
MOSFET N-CH 250V 2.7A D2PAK |
|
FQD5N60CTFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 2.8A DPAK |
|
SI7403BDN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 8A PPAK1212-8 |
|
IXFK24N100FWickmann / Littelfuse |
MOSFET N-CH 1000V 24A TO264 |
|
DMP2035UVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 7.2A TSOT26 |
|
FCA16N60Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 16A TO3PN |
|
IRF6691TR1IR (Infineon Technologies) |
MOSFET N-CH 20V 32A DIRECTFET |
|
IRFI644GVishay / Siliconix |
MOSFET N-CH 250V 7.9A TO220-3 |
|
2N7002LT3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 115MA SOT23-3 |
|
IRF1404ZGPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 180A TO220AB |
|
AO6415LAlpha and Omega Semiconductor, Inc. |
MOSFET P-CH 20V 3.3A 6TSOP |
|
SI7356ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8 |