English
简体中文
DIODE GEN PURP 3KV 250MA DO204
IC VREF SERIES 0.1% TSOT-23-6
MOSFET N-CH 200V 3.7A 8SO
DIODE GEN PURP 800V 1A DO-41
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.7A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 79mOhm @ 2.2A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 59 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1820 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AON6586Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 20A/35A 8DFN |
|
IXFH75N10Wickmann / Littelfuse |
MOSFET N-CH 100V 75A TO247AD |
|
IPD50R2K0CEBTMA1IR (Infineon Technologies) |
CONSUMER |
|
STK38N3LLH5STMicroelectronics |
MOSFET N-CH 30V 38A POLARPAK |
|
IRFR5505IR (Infineon Technologies) |
MOSFET P-CH 55V 18A DPAK |
|
IRLL024ZIR (Infineon Technologies) |
MOSFET N-CH 55V 5A SOT223 |
|
IRF1407STRRIR (Infineon Technologies) |
MOSFET N-CH 75V 100A D2PAK |
|
IPB12CNE8N GIR (Infineon Technologies) |
MOSFET N-CH 85V 67A D2PAK |
|
HUFA76432S3SSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 59A D2PAK |
|
IRFSL4321PBFIR (Infineon Technologies) |
MOSFET N-CH 150V 85A TO262 |
|
IRFR430ATRRPBFVishay / Siliconix |
MOSFET N-CH 500V 5A DPAK |
|
IRFR2405TRRPBFIR (Infineon Technologies) |
MOSFET N-CH 55V 56A DPAK |
|
SPB10N10LIR (Infineon Technologies) |
MOSFET N-CH 100V 10.3A TO263-3 |