English
简体中文
XTAL OSC XO 16.367670MHZ CMOS SM
DIODE GEN PURP FAST 2KV 1A DO41
CONN BARRIER STRIP 10CIRCUIT
MOSFET N-CH 40V 29A/130A 5DFN
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 29A (Ta), 130A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 2.5mOhm @ 50A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 50 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3100 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.7W (Ta), 83W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 5-DFN (5x6) (8-SOFL) |
| 包/箱: | 8-PowerTDFN, 5 Leads |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NP82N04PDG-E1-AYRenesas Electronics America |
MOSFET N-CH 40V 82A TO263 |
|
IRF3711PBFIR (Infineon Technologies) |
MOSFET N-CH 20V 110A TO220AB |
|
IRFR4105TRIR (Infineon Technologies) |
MOSFET N-CH 55V 27A DPAK |
|
STP18N60DM2STMicroelectronics |
MOSFET N-CH 600V 12A TO220 |
|
IPB03N03LAIR (Infineon Technologies) |
MOSFET N-CH 25V 80A TO263-3 |
|
AOTF11C60PAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 11A TO220-3F |
|
SI4390DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 8.5A 8SO |
|
NTTFS4945NTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 7.1A/34A 8WDFN |
|
IRFU014Vishay / Siliconix |
MOSFET N-CH 60V 7.7A TO251AA |
|
NTR4171PT3GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 2.2A SOT23-3 |
|
HAT2287WP-EL-ERenesas Electronics America |
MOSFET N-CH 200V 17A 8WPAK |
|
BUK9512-55B,127Nexperia |
MOSFET N-CH 55V 75A TO220AB |
|
IRLR7821TRRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 65A DPAK |