







IC SRAM 18MBIT PARALLEL 165FBGA
CRYSTAL 40.6100MHZ SERIES SMD
MOSFET N-CH 40V 82A TO263
PLANAR E CORES
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 82A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
| rds on (max) @ id, vgs: | 3.5mOhm @ 41A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 150 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 9000 pF @ 25 V |
| 场效应管特征: | - |
| 功耗(最大值): | 1.8W (Ta), 143W (Tc) |
| 工作温度: | 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-263 |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
IRF3711PBFIR (Infineon Technologies) |
MOSFET N-CH 20V 110A TO220AB |
|
|
IRFR4105TRIR (Infineon Technologies) |
MOSFET N-CH 55V 27A DPAK |
|
|
STP18N60DM2STMicroelectronics |
MOSFET N-CH 600V 12A TO220 |
|
|
IPB03N03LAIR (Infineon Technologies) |
MOSFET N-CH 25V 80A TO263-3 |
|
|
AOTF11C60PAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 11A TO220-3F |
|
|
SI4390DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 8.5A 8SO |
|
|
NTTFS4945NTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 7.1A/34A 8WDFN |
|
|
IRFU014Vishay / Siliconix |
MOSFET N-CH 60V 7.7A TO251AA |
|
|
NTR4171PT3GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 2.2A SOT23-3 |
|
|
HAT2287WP-EL-ERenesas Electronics America |
MOSFET N-CH 200V 17A 8WPAK |
|
|
BUK9512-55B,127Nexperia |
MOSFET N-CH 55V 75A TO220AB |
|
|
IRLR7821TRRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 65A DPAK |
|
|
NTD4959NH-35GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 9A/58A IPAK |