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IC REG MULTI CONFG ADJ 8MSOP
MEMS OSC XO 12.0000MHZ LVCMOS
MOSFET N-CH 600V 52A SOT227
IC EMI REDUCTION PREMIS SSCG
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| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 52A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 45mOhm @ 22.5A, 10V |
| vgs(th) (最大值) @ id: | 3.9V @ 3mA |
| 栅极电荷 (qg) (max) @ vgs: | 150 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 7200 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 290W (Tc) |
| 工作温度: | -40°C ~ 150°C (TJ) |
| 安装类型: | Chassis Mount |
| 供应商设备包: | SOT-227 |
| 包/箱: | SOT-227-4, miniBLOC |
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