







 
                            MEMS OSC XO 66.6660MHZ H/LV-CMOS
 
                            XTAL OSC VCXO 222.7500MHZ LVPECL
 
                            MOSFET P-CH 60V 2.2A 6TSOP
 
                            RACK CLAMP PROBE
| 类型 | 描述 | 
|---|---|
| 系列: | TrenchFET® | 
| 包裹: | Tape & Reel (TR)Cut Tape (CT) | 
| 零件状态: | Obsolete | 
| 场效应管类型: | P-Channel | 
| 技术: | MOSFET (Metal Oxide) | 
| 漏源电压 (vdss): | 60 V | 
| 电流 - 连续漏极 (id) @ 25°c: | 2.2A (Tc) | 
| 驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V | 
| rds on (max) @ id, vgs: | 220mOhm @ 2.2A, 10V | 
| vgs(th) (最大值) @ id: | 1V @ 250µA (Min) | 
| 栅极电荷 (qg) (max) @ vgs: | 14 nC @ 10 V | 
| vgs (最大值): | ±20V | 
| 输入电容 (ciss) (max) @ vds: | - | 
| 场效应管特征: | - | 
| 功耗(最大值): | 2W (Ta) | 
| 工作温度: | -55°C ~ 150°C (TJ) | 
| 安装类型: | Surface Mount | 
| 供应商设备包: | 6-TSOP | 
| 包/箱: | SOT-23-6 Thin, TSOT-23-6 | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | IRLU8203PBFIR (Infineon Technologies) | MOSFET N-CH 30V 110A I-PAK | 
|   | STT7P2UH7STMicroelectronics | MOSFET P-CH 20V 7A SOT23-6 | 
|   | NVD4856NT4GSanyo Semiconductor/ON Semiconductor | MOSFET N-CH 25V 13.3A/89A DPAK | 
|   | NTP18N06Sanyo Semiconductor/ON Semiconductor | MOSFET N-CH 60V 15A TO220AB | 
|   | IRF1503STRLPBFIR (Infineon Technologies) | MOSFET N-CH 30V 75A D2PAK | 
|   | IXFK73N30QWickmann / Littelfuse | MOSFET N-CH 300V 73A TO264AA | 
|   | STB15N65M5STMicroelectronics | MOSFET N-CH 650V 11A D2PAK | 
|   | SSM3K7002BSU,LFToshiba Electronic Devices and Storage Corporation | MOSFET N-CH 60V 200MA USM | 
|   | STD18N65M2-EPSTMicroelectronics | MOSFET N-CH 650V 11A DPAK | 
|   | 2SJ438,MDKQ(MToshiba Electronic Devices and Storage Corporation | MOSFET P-CH TO220NIS | 
|   | AUIRFL014NIR (Infineon Technologies) | MOSFET N-CH 55V 1.5A SOT-223 | 
|   | IRFR4105ZIR (Infineon Technologies) | MOSFET N-CH 55V 30A DPAK | 
|   | NTB18N06LSanyo Semiconductor/ON Semiconductor | MOSFET N-CH 60V 15A D2PAK |