English
简体中文
MOSFET N-CH 500V 22A TO220
DIODE GEN PURP 1KV 12A DO203AA
CONN RCPT 31POS 0.1 GOLD PCB R/A
8LT 23C 21#20 2#16 PIN RECP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 22A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 260mOhm @ 11A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 83 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 3710 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 417W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPD90N04S40-4ATMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FCPF190N65FL1Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 20.6A TO220F |
|
SIHD7N60ET4-GE3Vishay / Siliconix |
MOSFET N-CH 600V 7A TO252AA |
|
HUF76609D3_NLRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SFR9014TFRochester Electronics |
MOSFET P-CH 60V 5.3A DPAK |
|
IXTA08N120PWickmann / Littelfuse |
MOSFET N-CH 1200V 800MA TO263 |
|
FDD8878Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 11A/40A TO252AA |
|
FDMS0308ASSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 24A/49A 8PQFN |
|
SSM3J356R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 60V 2A SOT-23F |
|
SK8603150LPanasonic |
MOSFET N-CH 30V 26A/89A 8HSO |
|
FDPF7N50U-GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 5A TO220F |
|
FDME910PZTRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
TT8U2TCRROHM Semiconductor |
MOSFET P-CH 20V 2.4A 8TSST |