English
简体中文
MOSFET N-CH 100V 31A DPAK
MOSFET N-CH 1200V 800MA TO263
DIGIPOT, CMOS, PQCC16
SENSOR 15PSI 1/4-18NPT .5-4.5V
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Polar™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 1200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 800mA (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 25Ohm @ 500mA, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 50µA |
| 栅极电荷 (qg) (max) @ vgs: | 14 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 333 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 50W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-263 (IXTA) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDD8878Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 11A/40A TO252AA |
|
FDMS0308ASSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 24A/49A 8PQFN |
|
SSM3J356R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 60V 2A SOT-23F |
|
SK8603150LPanasonic |
MOSFET N-CH 30V 26A/89A 8HSO |
|
FDPF7N50U-GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 5A TO220F |
|
FDME910PZTRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
TT8U2TCRROHM Semiconductor |
MOSFET P-CH 20V 2.4A 8TSST |
|
SQ2310ES-T1_GE3Vishay / Siliconix |
MOSFET N-CH 20V 6A TO236 |
|
DMP32D4S-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 300MA SOT23 |
|
STP77N6F6STMicroelectronics |
MOSFET N-CH 60V 77A TO220 |
|
IAUZ30N06S5L140ATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 30A TSDSON-8-32 |
|
FCU900N60Z-NDRochester Electronics |
MOSFET N CH 600V 4.5A IPAK |
|
STL3NK40STMicroelectronics |
MOSFET N-CH 400V 430MA POWERFLAT |