English
简体中文
FUSE BOARD MOUNT 80MA 250VAC RAD
XTAL OSC VCXO 80.0000MHZ LVPECL
MEMS OSC XO 133.333333MHZ LVCMOS
MOSFET N-CH 55V 75A D2PAK
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 75A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 8mOhm @ 52A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 60 nC @ 5 V |
| vgs (最大值): | ±16V |
| 输入电容 (ciss) (max) @ vds: | 2.88 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 130W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRL3803PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 140A TO220AB |
|
SPP21N10Rochester Electronics |
MOSFET N-CH 100V 21A TO220-3 |
|
BSC884N03MSGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
STL18N65M2STMicroelectronics |
MOSFET N-CH 650V 8A POWERFLAT HV |
|
RJK60S3DPP-E0#T2Rochester Electronics |
MOSFET N-CH 600V 12A TO220FP |
|
IRFP264PBFVishay / Siliconix |
MOSFET N-CH 250V 38A TO247-3 |
|
PSMN7R5-30YLDXNexperia |
MOSFET N-CH 30V 51A LFPAK56 |
|
IPP410N30NAKSA1IR (Infineon Technologies) |
MOSFET N-CH 300V 44A TO220-3 |
|
AOB160A60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 24A TO263 |
|
MCU20N06A-TPMicro Commercial Components (MCC) |
MOSFET N-CH 60V 20A DPAK |
|
SIR873DP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 150V 37A PPAK SO-8 |
|
SI2315BDS-T1-E3Vishay / Siliconix |
MOSFET P-CH 12V 3A SOT23-3 |
|
AOW66616Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 33A/140A TO262 |