







MEMS OSC TCXO SMD
MEMS OSC XO 19.2000MHZ H/LV-CMOS
MOSFET P-CH 12V 3A SOT23-3
PWR ENT PLUG NON-NEMA STR SCREW
| 类型 | 描述 |
|---|---|
| 系列: | TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 12 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3A (Ta) |
| 驱动电压(最大 rds on,最小 rds on): | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 50mOhm @ 3.85A, 4.5V |
| vgs(th) (最大值) @ id: | 900mV @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 15 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 715 pF @ 6 V |
| 场效应管特征: | - |
| 功耗(最大值): | 750mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-23-3 (TO-236) |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
AOW66616Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 33A/140A TO262 |
|
|
SQV120N10-3M8_GE3Vishay / Siliconix |
MOSFET N-CH 100V 120A TO262-3 |
|
|
SI2302CDS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 2.6A SOT23-3 |
|
|
IPW60R041P6FKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 77.5A TO247-3 |
|
|
IXFX170N20PWickmann / Littelfuse |
MOSFET N-CH 200V 170A PLUS247-3 |
|
|
IXTP14N60X2Wickmann / Littelfuse |
MOSFET N-CH 600V 14A TO220 |
|
|
NTD4302GRochester Electronics |
MOSFET N-CH 30V 8.4A/68A DPAK |
|
|
STP2N95K5STMicroelectronics |
MOSFET N-CH 950V 2A TO220 |
|
|
FDD5N60NZTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 4A DPAK |
|
|
AOB11S60LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 11A TO263 |
|
|
TPHR9203PL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 150A 8SOP |
|
|
NTMFS4935NBT1GRochester Electronics |
MOSFET N-CH 30V 13A/93A 5DFN |
|
|
SIS780DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 18A PPAK1212-8 |