







 
                            MOSFET N-CH 200V 9A DPAK
 
                            MOSFET N-CH 40V 17A TDSON
 
                            CONN HDR POST 19POS GOLD
 
                            CONN RCPT FMALE 37POS GOLD CRIMP
| 类型 | 描述 | 
|---|---|
| 系列: | OptiMOS™ | 
| 包裹: | Tape & Reel (TR)Cut Tape (CT) | 
| 零件状态: | Active | 
| 场效应管类型: | N-Channel | 
| 技术: | MOSFET (Metal Oxide) | 
| 漏源电压 (vdss): | 40 V | 
| 电流 - 连续漏极 (id) @ 25°c: | 17A (Ta), 49A (Tc), 59A (Tc) | 
| 驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V | 
| rds on (max) @ id, vgs: | 5.9mOhm @ 50A, 10V | 
| vgs(th) (最大值) @ id: | 2.3V @ 250µA | 
| 栅极电荷 (qg) (max) @ vgs: | 9.4 nC @ 10 V | 
| vgs (最大值): | ±20V | 
| 输入电容 (ciss) (max) @ vds: | 830 pF @ 20 V | 
| 场效应管特征: | - | 
| 功耗(最大值): | 3W (Ta), 38W (Tc) | 
| 工作温度: | -55°C ~ 175°C (TJ) | 
| 安装类型: | Surface Mount | 
| 供应商设备包: | PG-TDSON-8-6 | 
| 包/箱: | 8-PowerTDFN | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | IRFU9210PBFVishay / Siliconix | MOSFET P-CH 200V 1.9A TO251AA | 
|   | R6007KNXROHM Semiconductor | MOSFET N-CH 600V 7A TO220FM | 
|   | IPW60R045P7XKSA1IR (Infineon Technologies) | MOSFET N-CH 650V 61A TO247-3-41 | 
|   | AUIRL3705ZSRochester Electronics | MOSFET N-CH 55V 75A D2PAK | 
|   | IRL3803PBFIR (Infineon Technologies) | MOSFET N-CH 30V 140A TO220AB | 
|   | SPP21N10Rochester Electronics | MOSFET N-CH 100V 21A TO220-3 | 
|   | BSC884N03MSGRochester Electronics | N-CHANNEL POWER MOSFET | 
|   | STL18N65M2STMicroelectronics | MOSFET N-CH 650V 8A POWERFLAT HV | 
|   | RJK60S3DPP-E0#T2Rochester Electronics | MOSFET N-CH 600V 12A TO220FP | 
|   | IRFP264PBFVishay / Siliconix | MOSFET N-CH 250V 38A TO247-3 | 
|   | PSMN7R5-30YLDXNexperia | MOSFET N-CH 30V 51A LFPAK56 | 
|   | IPP410N30NAKSA1IR (Infineon Technologies) | MOSFET N-CH 300V 44A TO220-3 | 
|   | AOB160A60LAlpha and Omega Semiconductor, Inc. | MOSFET N-CH 600V 24A TO263 |