English
简体中文
MOSFET N-CH 60V 14A 8SO T&R 2
IGBT TRENCH 600V 48A TO220AB
CONN RCPT MALE 37POS GOLD CRIMP
TOOL HDI ALIGNMENT 6ROW 135POS
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 14A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 8mOhm @ 20A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 41.3 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2090 pF @ 30 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.5W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STP75NS04ZSTMicroelectronics |
MOSFET N-CH 33V 80A TO220AB |
|
TPH6400ENH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 200V 13A 8SOP |
|
IPA65R310CFDXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 11.4A TO220 |
|
FQI5N30TURochester Electronics |
MOSFET N-CH 300V 5.4A I2PAK |
|
ISP12DP06NMXTSA1IR (Infineon Technologies) |
MOSFET P-CH 60V 2.8A SOT223-4 |
|
NTD60N03-001Rochester Electronics |
MOSFET N-CH 28V 60A IPAK |
|
IRFZ44PBF-BE3Vishay / Siliconix |
MOSFET N-CH 60V 50A TO220AB |
|
FCD1300N80ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 4A DPAK |
|
DMN62D0U-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 380MA SOT23 |
|
TSM045NB06CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 60V 16A/104A 8PDFN |
|
STF7N65M6STMicroelectronics |
MOSFET N-CH 650V 5A TO220FP |
|
TK100S04N1L,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 100A DPAK |
|
R5005CNJTLROHM Semiconductor |
MOSFET N-CH 500V 5A LPTS |