English
简体中文
MOSFET N-CH 200V 13A 8SOP
TRIAC 400V 4A TO251
IC BATT MON MULT-CHEM 2C SOT23-8
CONN RCPT 62POS 0.1 GOLD PCB
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | U-MOSVIII-H |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 13A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 64mOhm @ 6.5A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 300µA |
| 栅极电荷 (qg) (max) @ vgs: | 11.2 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1100 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.6W (Ta), 57W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SOP Advance (5x5) |
| 包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPA65R310CFDXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 11.4A TO220 |
|
FQI5N30TURochester Electronics |
MOSFET N-CH 300V 5.4A I2PAK |
|
ISP12DP06NMXTSA1IR (Infineon Technologies) |
MOSFET P-CH 60V 2.8A SOT223-4 |
|
NTD60N03-001Rochester Electronics |
MOSFET N-CH 28V 60A IPAK |
|
IRFZ44PBF-BE3Vishay / Siliconix |
MOSFET N-CH 60V 50A TO220AB |
|
FCD1300N80ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 4A DPAK |
|
DMN62D0U-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 380MA SOT23 |
|
TSM045NB06CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 60V 16A/104A 8PDFN |
|
STF7N65M6STMicroelectronics |
MOSFET N-CH 650V 5A TO220FP |
|
TK100S04N1L,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 100A DPAK |
|
R5005CNJTLROHM Semiconductor |
MOSFET N-CH 500V 5A LPTS |
|
DMP6023LFGQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 60V 7.7A PWRDI3333-8 |
|
FCP290N80Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 17A TO220-3 |