MOSFET P-CH 150V 2.2A 8SO
MOSFET N-CH 200V 13A 8SOP
2P,2MM,BB,REC,SRHZ,2.8,0.76AU,TU
IC REG LINEAR 5V 700MA 5DDPAK
类型 | 描述 |
---|---|
系列: | U-MOSVIII-H |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 200 V |
电流 - 连续漏极 (id) @ 25°c: | 13A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 64mOhm @ 6.5A, 10V |
vgs(th) (最大值) @ id: | 4V @ 300µA |
栅极电荷 (qg) (max) @ vgs: | 11.2 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1100 pF @ 100 V |
场效应管特征: | - |
功耗(最大值): | 1.6W (Ta), 57W (Tc) |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-SOP Advance (5x5) |
包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
IPA65R310CFDXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 11.4A TO220 |
![]() |
FQI5N30TURochester Electronics |
MOSFET N-CH 300V 5.4A I2PAK |
![]() |
ISP12DP06NMXTSA1IR (Infineon Technologies) |
MOSFET P-CH 60V 2.8A SOT223-4 |
![]() |
NTD60N03-001Rochester Electronics |
MOSFET N-CH 28V 60A IPAK |
![]() |
IRFZ44PBF-BE3Vishay / Siliconix |
MOSFET N-CH 60V 50A TO220AB |
![]() |
FCD1300N80ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 4A DPAK |
![]() |
DMN62D0U-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 380MA SOT23 |
![]() |
TSM045NB06CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 60V 16A/104A 8PDFN |
![]() |
STF7N65M6STMicroelectronics |
MOSFET N-CH 650V 5A TO220FP |
![]() |
TK100S04N1L,LXHQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 100A DPAK |
![]() |
R5005CNJTLROHM Semiconductor |
MOSFET N-CH 500V 5A LPTS |
![]() |
DMP6023LFGQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 60V 7.7A PWRDI3333-8 |
![]() |
FCP290N80Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 17A TO220-3 |