English
简体中文
MEMS OSC XO 25.000625MHZ LVCMOS
MOSFET P-CH 100V 10.5A D2PAK
CABLE ASSEM 2MM 30POS SGL END 2"
IC REG LINEAR 2.1V 300MA SNT6A
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 10.5A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 300mOhm @ 5.3A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 38 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1.035 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.8W (Ta), 66W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D²PAK (TO-263AB) |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
EPC2023EPC |
GANFET N-CH 30V 60A DIE |
|
IPB136N08N3GATMA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
TK1K9A60F,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 3.7A TO220SIS |
|
RTR020P02TLROHM Semiconductor |
MOSFET P-CH 20V 2A TSMT3 |
|
FDMC86240Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 4.6A/16A 8MLP |
|
SCTW35N65G2VAGSTMicroelectronics |
SICFET N-CH 650V 45A HIP247 |
|
SI7461DP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 60V 8.6A PPAK SO-8 |
|
SIR880ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 60A PPAK SO-8 |
|
PMN25UN,115Rochester Electronics |
MOSFET N-CH 20V 6A 6TSOP |
|
STD7N65M6STMicroelectronics |
MOSFET N-CH 650V 5A DPAK |
|
SIHF540S-GE3Vishay / Siliconix |
MOSFET N-CH 100V 28A D2PAK |
|
TK6A55DA(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 550V 5.5A TO220SIS |
|
BSH203,215Nexperia |
MOSFET P-CH 30V 470MA TO236AB |