English
简体中文
MEMS OSC XO 25.000625MHZ H/LV-CM
XTAL OSC VCXO 133.516483MHZ
MOSFET N-CH 600V 17A TO220FP
SENSOR 500PSI 9/16-18 UNF 4.5V
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | FDmesh™ II |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 17A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 220mOhm @ 8.5A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 60 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 1800 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 30W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220FP |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AUIRLR3410TRRochester Electronics |
AUTOMOTIVE HEXFET N-CHANNEL POWE |
|
TK8A45DA(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 450V 7.5A TO220SIS |
|
SIHB12N65E-GE3Vishay / Siliconix |
MOSFET N-CH 650V 12A D2PAK |
|
STL18N65M5STMicroelectronics |
MOSFET N-CH 650V 15A POWERFLAT |
|
IXTP1N100PWickmann / Littelfuse |
MOSFET N-CH 1000V 1A TO220AB |
|
MTP20N15EGRochester Electronics |
MOSFET N-CH 150V 20A TO220AB |
|
IPD040N03LGBTMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 90A TO252-31 |
|
TP65H050WSTransphorm |
GANFET N-CH 650V 34A TO247-3 |
|
FQP3P20Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 200V 2.8A TO220-3 |
|
STD95NH02LT4STMicroelectronics |
MOSFET N-CH 24V 80A DPAK |
|
MTM232270LBFPanasonic |
MOSFET N CH 20V 2A SMINI3-G1-B |
|
IRFR7540PBFRochester Electronics |
MOSFET N-CH 60V 90A DPAK |
|
IPW65R080CFDFKSA1IR (Infineon Technologies) |
MOSFET N-CH 700V 43.3A TO247-3 |