English
简体中文
GANFET N-CH 650V 34A TO247-3
CONN RCPT 18POS 0.1 GOLD SMD
CONN RCPT FMALE 6POS CRIMP
SYSTEM BASIS CHIP DCDC 0.8A VCO
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | GaNFET (Cascode Gallium Nitride FET) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 34A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 12V |
| rds on (max) @ id, vgs: | 60mOhm @ 22A, 10V |
| vgs(th) (最大值) @ id: | 4.8V @ 700µA |
| 栅极电荷 (qg) (max) @ vgs: | 24 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1000 pF @ 400 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 119W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-247-3 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FQP3P20Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 200V 2.8A TO220-3 |
|
STD95NH02LT4STMicroelectronics |
MOSFET N-CH 24V 80A DPAK |
|
MTM232270LBFPanasonic |
MOSFET N CH 20V 2A SMINI3-G1-B |
|
IRFR7540PBFRochester Electronics |
MOSFET N-CH 60V 90A DPAK |
|
IPW65R080CFDFKSA1IR (Infineon Technologies) |
MOSFET N-CH 700V 43.3A TO247-3 |
|
IRFB3206PBFIR (Infineon Technologies) |
MOSFET N-CH 60V 120A TO220AB |
|
FDP6676SRochester Electronics |
N-CHANNEL POWER MOSFET |
|
BFL4001Rochester Electronics |
MOSFET N-CH 900V 4.1A TO220FI |
|
STD5N95K3STMicroelectronics |
MOSFET N-CH 950V 4A DPAK |
|
PMV30XN,215Rochester Electronics |
MOSFET N-CH 20V 3.2A TO236AB |
|
RM8N650HDRectron USA |
MOSFET N-CHANNEL 650V 8A TO263-2 |
|
IPD85P04P4L06ATMA1IR (Infineon Technologies) |
MOSFET P-CH 40V 85A TO252-3 |
|
SQD40061EL_GE3Vishay / Siliconix |
MOSFET P-CH 40V 100A TO252AA |