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RES 34.8K OHM 0.25% 1/10W 0603
RES 4.7 OHM 20W 5% TO220
IRF7456 - SMPS HEXFET POWER MOSF
SMA-SJB/SMA-SJB G316 6I
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| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 16A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.8V, 10V |
| rds on (max) @ id, vgs: | 6.5mOhm @ 16A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 62 nC @ 5 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 3.64 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
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