English
简体中文
RES 51.1K OHM 0.5% 1/8W 0402
COOLX POWER SUPPLY
MEMS OSC XO 35.0000MHZ LVCMOS LV
MOSFET N-CH 100V 350MA TO92-3
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 350mA (Tj) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 3Ohm @ 500mA, 10V |
| vgs(th) (最大值) @ id: | 2V @ 500µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 60 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-92-3 |
| 包/箱: | TO-226-3, TO-92-3 (TO-226AA) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FQPF11P06Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 8.6A TO220F |
|
STI10N62K3STMicroelectronics |
MOSFET N-CH 620V 8.4A I2PAK |
|
IPW60R018CFD7XKSA1IR (Infineon Technologies) |
MOSFET N CH |
|
NTMS5P02R2Rochester Electronics |
MOSFET P-CH 20V 3.95A 8SOIC |
|
BSC014N06LS5ATMA1IR (Infineon Technologies) |
MOSFET 60V TDSON-8-7 |
|
CSD19505KTTTexas Instruments |
MOSFET N-CH 80V 200A DDPAK |
|
CSD16325Q5Texas Instruments |
MOSFET N-CH 25V 33A/100A 8VSON |
|
FQA5N90Rochester Electronics |
MOSFET N-CH 900V 5.8A TO3P |
|
STD12N65M2STMicroelectronics |
MOSFET N-CH 650V 8A DPAK |
|
SI7164DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 60A PPAK SO-8 |
|
FQU13N06LTU-WSSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 11A IPAK |
|
IXFN64N50PD2Wickmann / Littelfuse |
MOSFET N-CH 500V 52A SOT-227B |
|
IPP50R299CPRochester Electronics |
N-CHANNEL POWER MOSFET |