







WRENCH COMBINATION 3/4" 9.13"
MOSFET N-CH 25V 22A/113A 8VSON
DIODE GEN PURP 100V 2A DO214AA
SCHOTTKY RECTIFIER PDI5 T&R 1.5K
| 类型 | 描述 |
|---|---|
| 系列: | NexFET™ |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 25 V |
| 电流 - 连续漏极 (id) @ 25°c: | 22A (Ta), 113A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | - |
| rds on (max) @ id, vgs: | 4.5mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 2.1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 8.9 nC @ 4.5 V |
| vgs (最大值): | +16V, -12V |
| 输入电容 (ciss) (max) @ vds: | 1300 pF @ 12.5 V |
| 场效应管特征: | - |
| 功耗(最大值): | 3.1W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-VSON-CLIP (5x6) |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
IPB019N08N5ATMA1IR (Infineon Technologies) |
DIFFERENTIATED MOSFETS |
|
|
DMG6402LVT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 6A TSOT26 |
|
|
RQ5E035ATTCLROHM Semiconductor |
MOSFET P-CH 30V 3.5A TSMT3 |
|
|
IPB530N15N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 150V 21A D2PAK |
|
|
ECH8315-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 7.5A 8ECH |
|
|
FCH47N60Rochester Electronics |
MOSFET N-CH 600V 47A TO247-3 |
|
|
STD7N52K3STMicroelectronics |
MOSFET N-CH 525V 6A DPAK |
|
|
STF40NF20STMicroelectronics |
MOSFET N-CH 200V 40A TO220FP |
|
|
SPP07N60C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 7.3A TO220-3 |
|
|
DMN65D8LFB-7BZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 260MA 3DFN |
|
|
IRF7456PBFRochester Electronics |
IRF7456 - SMPS HEXFET POWER MOSF |
|
|
NTMYS4D1N06CLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 22A/100A LFPAK4 |
|
|
CPH3355-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 2.5A 3CPH |