English
简体中文
MEMS OSC XO 66.6660MHZ H/LV-CMOS
MOSFET N-CH 800V 1.8A TO220F
CONN HEADER VERT 6POS 2.54MM
SWITCH SNAP ACTION SPDT 16A 125V
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | QFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 800 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.8A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 5Ohm @ 900mA, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 19 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 690 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 39W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220F |
| 包/箱: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
ATP101-V-TL-HRochester Electronics |
MOSFET P-CH 4.5V ATPAK |
|
SQ4425EY-T1_GE3Vishay / Siliconix |
MOSFET P-CHANNEL 30V 18A 8SOIC |
|
BSH205G2VLNexperia |
MOSFET P-CH 20V 2.3A TO236AB |
|
BUK9214-30A,118Nexperia |
MOSFET N-CH 30V 63A DPAK |
|
FKI10126Sanken Electric Co., Ltd. |
MOSFET N-CH 100V 41A TO220F |
|
SI7852ADP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 30A PPAK SO-8 |
|
NVTFS6H860NWFTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 8A/30A 8WDFN |
|
NDS8434Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
BSS139H6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 250V 100MA SOT23-3 |
|
VMO580-02FWickmann / Littelfuse |
MOSFET N-CH 200V 580A Y3-LI |
|
MTD3055VSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 12A TO252-3 |
|
IXTP14N60PWickmann / Littelfuse |
MOSFET N-CH 600V 14A TO220AB |
|
BSN20,215Rochester Electronics |
MOSFET N-CH 50V 173MA TO236AB |