English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 520 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.3A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 5.3Ohm @ 650mA, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 11 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 340 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.5W (Ta), 26W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | I-PAK |
| 包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPN80R2K4P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 2.5A SOT223 |
|
HUF76407D3SRochester Electronics |
MOSFET N-CH 60V 12A TO252AA |
|
SQJA20EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 200V 22.5A PPAK SO-8 |
|
MCH3322-EBM-TL-ERochester Electronics |
P-CHANNEL SILICON MOSFET |
|
IPI65R660CFDRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPA60R520CPXKSA1Rochester Electronics |
MOSFET N-CH 600V 6.8A TO220-FP |
|
DKI10526Sanken Electric Co., Ltd. |
MOSFET N-CH 100V 19A TO252 |
|
IPI65R099C6Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRFP150ARochester Electronics |
MOSFET N-CH 100V 43A TO3PN |
|
ZXMP7A17GTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 70V 2.6A SOT223 |
|
STFH13N60M2STMicroelectronics |
MOSFET N-CH 600V 11A TO220FP |
|
FQPF9N50CFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 9A TO220F |
|
IRLMS1503TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 3.2A MICRO6 |
