







THERM PAD A1250 5X5X1MM
MOSFET N-CH 200V 22.5A PPAK SO-8
CONN SSL IDC CONTACT 22AWG SLDR
FG MEGA/MASTER-MOD
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TrenchFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 22.5A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 7.5V, 10V |
| rds on (max) @ id, vgs: | 50mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 3.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 27 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1300 pF @ 25 V |
| 场效应管特征: | - |
| 功耗(最大值): | 68W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK® SO-8 |
| 包/箱: | PowerPAK® SO-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
MCH3322-EBM-TL-ERochester Electronics |
P-CHANNEL SILICON MOSFET |
|
|
IPI65R660CFDRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
IPA60R520CPXKSA1Rochester Electronics |
MOSFET N-CH 600V 6.8A TO220-FP |
|
|
DKI10526Sanken Electric Co., Ltd. |
MOSFET N-CH 100V 19A TO252 |
|
|
IPI65R099C6Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
IRFP150ARochester Electronics |
MOSFET N-CH 100V 43A TO3PN |
|
|
ZXMP7A17GTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 70V 2.6A SOT223 |
|
|
STFH13N60M2STMicroelectronics |
MOSFET N-CH 600V 11A TO220FP |
|
|
FQPF9N50CFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 9A TO220F |
|
|
IRLMS1503TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 3.2A MICRO6 |
|
|
STH110N10F7-2STMicroelectronics |
MOSFET N CH 100V 110A H2PAK |
|
|
IXFA4N100QWickmann / Littelfuse |
MOSFET N-CH 1000V 4A TO263 |
|
|
STD3N40K3STMicroelectronics |
MOSFET N CH 400V 2A DPAK |