







MOSFET N-CH 30V 5A MICRO3/SOT23
DIODE ZENER 3.9V 200MW SOD323
.050 X .050 C.L. FEMALE IDC ASSE
POWER TERM BLOCK RING LUG 150A 1
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5A (Ta) |
| 驱动电压(最大 rds on,最小 rds on): | 2.5V, 4.5V |
| rds on (max) @ id, vgs: | 29mOhm @ 5A, 4.5V |
| vgs(th) (最大值) @ id: | 1.1V @ 10µA |
| 栅极电荷 (qg) (max) @ vgs: | 6.8 nC @ 4.5 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 650 pF @ 25 V |
| 场效应管特征: | - |
| 功耗(最大值): | 1.3W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | Micro3™/SOT-23 |
| 包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
IPAW60R360P7SXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 9A TO220 |
|
|
FDS6676Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
|
TK6A45DA(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 450V 5.5A TO220SIS |
|
|
IPI110N20N3GAKSA1Rochester Electronics |
MOSFET N-CH 200V 88A TO262-3 |
|
|
SSM3K2615R,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 2A SOT23F |
|
|
IXFX21N100QWickmann / Littelfuse |
MOSFET N-CH 1000V 21A PLUS247-3 |
|
|
NP36N055HLE-AYRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
FDS9412Rochester Electronics |
MOSFET N-CH 30V 7.9A 8SOIC |
|
|
STD7N65M2STMicroelectronics |
MOSFET N-CH 650V 5A DPAK |
|
|
IRFH4234TRPBFRochester Electronics |
MOSFET N-CH 25V 22A PQFN |
|
|
IPU95R2K0P7AKMA1IR (Infineon Technologies) |
MOSFET N-CH 950V 4A TO251-3 |
|
|
IPAW60R360P7SE8228XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 9A TO220 |
|
|
AOD423Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 15A/70A TO252 |