







MEMS OSC XO 25.000625MHZ LVCMOS
MOSFET N-CH 1000V 21A PLUS247-3
MOSFET P-CH 100V 10.5A D2PAK
IC REG LINEAR 2.1V 300MA SNT6A
| 类型 | 描述 |
|---|---|
| 系列: | HiPerFET™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 1000 V |
| 电流 - 连续漏极 (id) @ 25°c: | 21A (Tc) |
| 驱动电压(最大 rds on,最小 rds on): | 10V |
| rds on (max) @ id, vgs: | 500mOhm @ 10.5A, 10V |
| vgs(th) (最大值) @ id: | 5.5V @ 4mA |
| 栅极电荷 (qg) (max) @ vgs: | 170 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 6900 pF @ 25 V |
| 场效应管特征: | - |
| 功耗(最大值): | 500W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PLUS247™-3 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
NP36N055HLE-AYRochester Electronics |
N-CHANNEL POWER MOSFET |
|
|
FDS9412Rochester Electronics |
MOSFET N-CH 30V 7.9A 8SOIC |
|
|
STD7N65M2STMicroelectronics |
MOSFET N-CH 650V 5A DPAK |
|
|
IRFH4234TRPBFRochester Electronics |
MOSFET N-CH 25V 22A PQFN |
|
|
IPU95R2K0P7AKMA1IR (Infineon Technologies) |
MOSFET N-CH 950V 4A TO251-3 |
|
|
IPAW60R360P7SE8228XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 9A TO220 |
|
|
AOD423Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 15A/70A TO252 |
|
|
STD60NF55LT4STMicroelectronics |
MOSFET N-CH 55V 60A DPAK |
|
|
NTP5404NRGRochester Electronics |
MOSFET N-CH 40V 24A/167A TO220AB |
|
|
AUIRFSL8409Rochester Electronics |
MOSFET N-CH 40V 195A TO262 |
|
|
NTMS4800NR2GRochester Electronics |
MOSFET N-CH 30V 4.9A 8SOIC |
|
|
SQD50034EL_GE3Vishay / Siliconix |
MOSFET N-CH 60V 100A TO252AA |
|
|
PSMN1R5-40PS,127Nexperia |
MOSFET N-CH 40V 120A TO220AB |