类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR2 |
内存大小: | 1Gb (64M x 16) |
内存接口: | Parallel |
时钟频率: | 400 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 400 ps |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | -40°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 84-TFBGA |
供应商设备包: | 84-FBGA (8x12.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
W25Q64JVTCIMWinbond Electronics Corporation |
IC FLASH 64MBIT SPI 24TFBGA |
|
24CS512-I/SMRoving Networks / Microchip Technology |
512K 3.4MHZ I2C SERIAL EEPROM |
|
16-100044-01-TCypress Semiconductor |
IC GATE NOR |
|
S99-50240Cypress Semiconductor |
IC FLASH MEM NOR SMD |
|
W948D6DBHX5IWinbond Electronics Corporation |
IC SDRAM 256MBIT 65NM 60BGA |
|
AT49BV163D-70CURoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48CBGA |
|
71V30S35TFIRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
M58LT256KSB7ZA6F TRMicron Technology |
IC FLASH 256MBIT PARALLEL 64TBGA |
|
MT53D512M64D4NW-046 WT ES:DMicron Technology |
IC DRAM 32GBIT 2133MHZ 432VFBGA |
|
M25P10-AVMB3TP/Y TRMicron Technology |
IC FLASH 1MBIT SPI 50MHZ 8UFDFPN |
|
MT29F4T08EYHBBG9-3R:B TRMicron Technology |
IC FLASH 4TB PARALLEL 333MHZ |
|
MT41K256M16TW-93:P TRMicron Technology |
IC SDRAM DDR3 4G FBGA |
|
CG8251AACypress Semiconductor |
IC MEM F-RAM PARALLEL 32TSOP I |