English
简体中文
MEMS OSC XO 4.0960MHZ LVCM LVTTL
R-400PRV 16A CATH CASE
IC EEPROM 512KBIT SPI 20MHZ DIE
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 512Kb (64K x 8) |
| 内存接口: | SPI |
| 时钟频率: | 20 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 1.8V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | Die |
| 供应商设备包: | Die |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
MT29F2G08ABAFAH4-ITS:F TRMicron Technology |
IC FLASH 2GBIT PARALLEL 63VFBGA |
|
|
EDFA232A2PF-GD-F-R TRMicron Technology |
IC DRAM 16GBIT PARALLEL 168FBGA |
|
|
MT35XU512ABA1G12-0AUT TRMicron Technology |
IC FLASH 512MBIT XCCELA 24TPBGA |
|
|
7024S55J/S2753Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |
|
|
M29W256GH7AZS6EMicron Technology |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
|
MT53D512M32D2NP-053 WT:DMicron Technology |
IC DRAM 16GBIT 1866MHZ 200WFBGA |
|
|
CG8650AACypress Semiconductor |
IC SOC WI-FI WICED |
|
|
MT29F128G08CBECBL95B3WC2Micron Technology |
IC FLASH 128GBIT PARALLEL WAFER |
|
|
MT47H256M8EB-187E:CMicron Technology |
IC DRAM 2GBIT PARALLEL 60FBGA |
|
|
MT48LC16M8A2BB-6A:L TRMicron Technology |
IC DRAM 128MBIT PARALLEL 60FBGA |
|
|
MTFC16GLTDV-WT TRMicron Technology |
IC FLASH 128GBIT MMC 169VFBGA |
|
|
F320BJHEPTTL90Sharp Microelectronics |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
|
MT29F32G08ABEDBJ4-12:DMicron Technology |
IC FLASH 32GBIT PARALLEL 83MHZ |